According to a recent shareholder letter from…
A GaN FET ‘TP65H015G5WS’ with a resistance voltage of + 650V has been published by Transphorm of the United States, which has a low resistance of 18m (maximum value when the gate source voltage is + 10V) . It is the first produced device using the new 5th generation (Gen V) technologies from the company. “In the 5th generation technology, by applying the latest epitaxial growth technology, patented design technology, package inductance reduction technology, etc., productivity is increased, and at the same time, on-resistance, total gate charge, and output.
Performance such as capacitance and reverse recovery charge has been improved. “In the 5th generation technology, productivity is increased by applying the latest epitaxial growth technology, patented design technology, package inductance reduction technology, etc., and at the same time, on-resistance, total gate charge, and output. Performance has been enhanced, such as capacitance and reverse recovery charge.
“we achieved the lowest value in the industry among various switching elements enclosed in the industry standard 3-terminal TO-247 package, such as GaN FETs, SiC power MOSFETs, and Si power MOSFETs”we achieve on-resistance (the company).
And. And and. When the company prototyped a step-up DC-DC converter circuit with a half-bridge configuration with a maximum output of 12 kW, compared to using a SiC power MOSFET, it was able to minimize power loss by up to 25 percent.
It is targeted at electric vehicle (EV) and hybrid electric vehicle (HEV) mounted on-board chargers (OBCs), DC-DC converters, and powertrain inverters. These are currently the SiC Power MOSET targeted markets. We will contest the rivalry in the EV / HEV industry with SiC power MOSFETs by selling GaN FETs that surpass the output of SiC power MOSFETs.
Furthermore for data center infrastructure and computer power supplies, uninterruptible power supplies (UPS) and inverters for photovoltaic power generation systems, new products can be used. In the middle of 2021, the consistency specification ‘AEC-Q101’ for automotive discrete semiconductors is scheduled to be acquired.
This is a typically-off GaN FET type realized by a GaN HEMT connecting cascode and a Si power MOS FRT low resistance voltage. The maximum drain current is 95A for continuous and 600A for pulse. The gate’s threshold voltage is +4V (standard value).
The cumulative charge for the gate is 68nCC (standard value). The capacitance of the input is 4670pFFF (standard value). The potential for production is 312pFFF (standard value). The capacitance for feedback is 8pF FF (standard value). The sum of the charge for reverse recovery is 430 nC (standard value). The temperature range of the working joint is -55 to + 150 ° C. We have begun delivering samples now. The price has not been announced.
An additional equity stake in Japanese car parts manufacturer Calsonic has also been announced by Transphorm. In March 2020, with a US $ 4 million equity commitment by December 2020, Transphorm and Marelli signed a strategic partnership agreement on automotive / EV power conversion technologies using GaN FETs. Did. Went. In the future, in the first quarter of 2021, we expect to make an additional equity contribution of US$ 1 million.